器件名称: 2SK1335S
功能描述: Silicon N-Channel MOS FET
文件大小: 46.94KB 共8页
简 介:2SK1335(L), 2SK1335(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
2SK1335(L), 2SK1335(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 200 ±20 3 12 3 20 150 –55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 200 ±20 — — 2.0 — 1.5 — — — — — — — — — Typ — — — — — 0.5 2.3 380 150 35 10 27 30 20 1.0 120 Max — — ±10 100 4.0 0.8 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 3 A, VGS = 0 I F = 3 A, VGS = 0, diF/dt = 50 A/s I D = 2 A, VGS = 10 V, RL = 15 Test conditions I D = 10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 160 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 10 V *1 I D = 2 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resist……
