器件名称: 2SK1318
功能描述: Silicon N Channel MOS FET High Speed Power Switching
文件大小: 63.25KB 共10页
简 介:2SK1318
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features
Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1318
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D (peak)* I DR Pch*2 Tch Tstg
1
Ratings 120 ±20 20 80 20 35 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1318
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Symbol V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) Min 120 ±20 — — 1.0 — — 10 — — — — — — — — — Typ — — — — — 0.095 0.11 17 1300 430 60 14 70 210 90 1.4 280 Max — — ±……
