器件名称: 2SJ471-E
功能描述: Silicon P Channel DV-L MOS FET
文件大小: 83.03KB 共7页
简 介:2SJ471
Silicon P Channel DV-L MOS FET
REJ03G0865-0200 (Previous: ADE-208-540) Rev.2.00 Sep 07, 2005
Description
High speed power switching
Features
Low on-resistance RDS (on) = 25 m typ. 4 V gate drive devices. High speed switching
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM)
D
G
1. Gate 2. Drain 3. Source
1 2
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SJ471
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value –30 ±20 –30 –120 –30 30 150 –55 to +150
Unit V V A A A W °C °C
Pch Tch
Note 2
Tstg
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-Drain diode forward voltage Body-Drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) 1 RDS (on) 2 |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min –30 ±20 — — –1.0 — — 12 — — — — — — — — — Typ — — — — — 25 40 20 1700 9……
