器件名称: 2SK1317
功能描述: Silicon N-Channel MOS FET
文件大小: 48.9KB 共8页
简 介:2SK1317
Silicon N-Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage V DSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-3P
D
G
1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1317
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 1500 ±20 2.5 7 2.5 100 150 –55 to +150
Unit V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS 1500 — — 2.0 — 0.45 — — — — — — — — — Typ — — — — 9 0.75 990 125 60 17 70 110 60 0.9 1750 Max — ±1 500 4.0 12 — — — — — — — — — — Unit V A A V S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 2 A, VGS = 0, diF/dt = 100 A/s I D = 2 A, VGS = 10 V, RL = 15 Test conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 1200 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2 A, VGS = 15 V *1 I D = 1 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Re……
