器件名称: 2SJ389
功能描述: Silicon P Channel MOS FET
文件大小: 46.3KB 共7页
简 介:2SJ389 L , 2SJ389 S
Silicon P Channel MOS FET
Application
DPAK–2
High speed power switching
4 4
Features
Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC – DC converter Avalanche Ratings
12 2, 4 12 3
3
1
3
1. Gate 2. Drain 3. Source 4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR IAP*** EAR*** Pch** Tch Tstg Ratings –60 ±20 –10 –40 –10 –10 8.5 30 150 –55 to +150 Unit V V A A A A mJ W °C °C
——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 s, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50
2SJ389 L , 2SJ389 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak ……
