器件名称: FDT439N
功能描述: N-Channel 2.5V Specified EnhancementMode Field Effect Transistor
文件大小: 289.55KB 共8页
简 介:FDT439N
June 1999
FDT439N
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
General Description
This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V RDS(on) = 0.058 @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package.
Applications
DC/DC converter Load switch Motor driving
D
D
D
D
S D
SOT-223
S
G D S
G
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25°C unless otherwise noted
Parameter
FDT439N
30 ±8
(Note 1a)
Units
V V A W
6.3 20 3 1.3 1.1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
Package Marking and Ordering Information
Device Marking
FDT439N
Device
FDT439N
Reel Size
13’’
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