器件名称: FDT434P
功能描述: P-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 244.57KB 共8页
简 介:FDT434P
January 2000
FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
–5.5 A, –20 V. RDS(ON) = 0.050 @ VGS = –4.5 V RDS(ON) = 0.070 @ VGS = –2.5 V. Low gate charge (13nC typical) High performance trench technology for extremely low RDS(ON) . High power and current handling capability in a widely used surface mount package.
Applications
Low Dropout Regulator DC/DC converter Load switch Motor driving
D
D
D
D
S D
SOT-223
S
G
G
D
S
SOT-223 *
(J23Z)
G
G
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
–20 ±8
(Note 1a)
Units
V V A W
–6 –30 3 1.3 1.1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
Package Marking and Ordering Information
Device Marking 434 Device FDT434P Reel Size 13’’ Tape width 12mm Quantity 2500 units
1999 Fairchild Semiconductor Corporation
FDT434P Rev. C1 (W)
FDT434P
Electrical……
