器件名称: FDG6306P
功能描述: P-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 61.66KB 共5页
简 介:FDG6306P
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V – 12V).
Features
–0.6 A, –20 V. Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package RDS(ON) = 420 m @ V GS = –4.5 V RDS(ON) = 630 m @ V GS = –2.5 V
Applications
Battery management Load switch
S G D
G 2 or 5 S 1 or 4
6 or 3 D 5 or 2 G 4 or 1 S
D G
Pin 1
S
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ± 12
(Note 1)
Units
V V A W °C
–0.6 –2.0 0.3 –55 to +150
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ JA Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking .06 Device FDG6306P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2001 Fairchild Semiconductor Corporation
FDG6306P Rev C(W)
FDG6306P
Electrical Characteristics
Symbol
BV DSS BV DSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted……
