器件名称: FDG328P
功能描述: P-Channel 2.5V Specified PowerTrench MOSFET
文件大小: 76.76KB 共5页
简 介:FDG328P
October 2000
FDG328P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).
Features
–1.5 A, –20 V. RDS(ON) = 0.145 @ VGS = –4.5 V RDS(ON) = 0.210 @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package
Applications
Load switch Power management DC/DC converter
S D D
1 2
G
6 5 4
Pin 1
D D
3
SC70-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
–20 ± 12
(Note 1a)
Units
V V A W °C
–1.5 –6 0.75 0.48 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 °C/W
Package Marking and Ordering Information
Device Marking .28 Device FDG328P Reel Size 7’’ Tape width 8mm Quantity 3000 units
2000 Fairchild Semiconductor International
FDG328P Rev C(W)
FDG328P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coeffi……
