器件名称: 2SJ218
功能描述: Silicon P-Channel MOS FET
文件大小: 32.79KB 共5页
简 介:2SJ218
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
2SJ218
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –60 ±20 –45 –180 –45 60 150 –55 to +150
Unit V V A A A W °C °C
2
2SJ218
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –60 ±20 — — –1.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 16 — — — — — — — — — Typ — — — — — 0.033 0.045 25 3800 2000 490 30 235 670 450 –1.35 300 Max — — ±10 –250 –2.0 0.042 0.06 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = –45 A, VGS = 0 I F = –45 A, VGS = 0, diF/dt = 50 A/s I D = –20 A, VGS = –10 V, RL = 1.5 Unit V V A A V Test conditions I D = –10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –20 A, VGS = –10 V*1 I D = –20 A, VGS = –4 V*1 I D = –20 A, VDS = –10 V*1 VDS = –10 V, VGS = 0, f = 1 MHz
Zero gate voltage drain current I DS……
