器件名称: 2SJ186
功能描述: Silicon P-Channel MOS FET
文件大小: 42.09KB 共9页
简 介:2SJ186
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
UPAK 2 1 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SJ186
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –200 ±15 –0.5 –1.0 –0.5 1 150 –55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. When using the alumina ceramic board (12.5×20×0.7 mm)
2
2SJ186
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS –200 ±15 — — –2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.18 — — — — — — — — — Typ — — — — — 8.0 10.0 0.3 75 32 5 6 6 17 15 0.95 100 Max — — ±10 –50 –4.0 12.0 15.0 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = –0.5 A, VGS = 0 I F = –0.5 A, VGS = 0, diF/dt = 50 A/s I D = –0.25 A, VGS = –10 V, RL = 120 Unit V V A A V Test conditions I D = –10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±12 V, VDS = 0 VDS = –160 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –0.25 A, VGS = –10 V*1 I D = –1 A, VGS = –10 V*1 I D = –0.25 A, VDS = –10 V*1 VDS = –10 V,……