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74AHC1G126GV

器件名称: 74AHC1G126GV
功能描述: Bus buffer/line driver; 3-state
文件大小: 80.41KB    共16页
生产厂商: PHILIPS
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简  介:INTEGRATED CIRCUITS DATA SHEET 74AHC1G126; 74AHCT1G126 Bus buffer/line driver; 3-state Product specication Supersedes data of 2002 Feb 15 2002 Jun 06 Philips Semiconductors Product specication Bus buffer/line driver; 3-state FEATURES Symmetrical output impedance High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Very small 5-pin package Output capability: standard Specified from 40 to +125 °C. QUICK REFERENCE DATA Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. 74AHC1G126; 74AHCT1G126 DESCRIPTION The 74AHC1G/AHCT1G126 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output to assume a high-impedance OFF-state. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. PARAMETER propagation delay A to Y input capacitance power dissipation capacitance CONDITIONS AHC1G CL = 15 pF; VCC = 5 V 3.4 1.5 CL = 50 pF; f = 1 MHz; notes 1 and 2 9 AHCT1G 3.4 1.5 11 ns pF pF UNIT 2002 Jun 06 2 Philips S……
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