器件名称: 2SD880Y
功能描述: SILICON PLASTIC POWER TRANSISTOR
文件大小: 50.71KB 共2页
简 介:SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W
Technical Data
…designed for Low Frequency Power Amplifier.
F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package
MAXIMUM RATINGS
Rating
Collector- Emitter Voltage Collector – Base Voltage Emitter Base Voltage Collector Current – Continuos Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage junction Temperature Range
Symbol
V CEO V CB V EB IC IB PD Tj,Tstg
Value
60 60 7 3 0.3 30 0.24 -55 to +150
Unit
Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS Characteristic
Thermal resistance junction to case
Symbol
R thjc
Max.
4.16
Unit
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25
Characteristic * OFF CHARACTERISTICS : Collector–Emitter Breakdown [ Ic =50 mAdc, IB = 0 ] Collector Cutoff Current [ VCB = 60 Vdc, IB = 0 ] Collector–Base Breakdown [ Ic =1mAdc, IE = 0 ] Emitter Cutoff Current [VEB=7Vdc, IC=0] * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 0.5 Adc , VCE = 5.0 Vdc ] [ Ic =3 Adc , VCE =5.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 3Adc , IB = 0.3Adc ) Emitter–Base Saturation [ Ic =0.5Adc, VCE =5V ] Voltage VBE(ON) Symbol
°C unless otherwise noted ]
Min
Typ
Max
Unit
Voltage
VCEO(sus) ICB0
60 100
Vdc Adc
Voltage
BVCBO IEBO
60 100
Vdc Adc
hFE 100 20 VCE(sat) 200
1 1
Vdc Vdc
DYNAMIC CHARACTERISTICS : Current Gain – Bandwidth Product [Ic=0.5Adc,VCE=5Vdc,ftest=1.0 MHz ] Collector Output Capacitance VCB=10V,IE=0,f=1MHz
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