器件名称: 3DD13001
功能描述: TRANSISTOR
文件大小: 328.5KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13001
TRANSISTOR（ NPN ）
TO— 92
FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（ Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE（1） DC current gain hFE（2） Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat)
1.BASE
2.COLLECTOR
3.EMITTER
1 2 3
unless
Test
otherwise
MIN
specified）
TYP MAX UNIT V V V 100 200 100 μA μA μA
conditions
Ic= 100μA ，IE=0 IC= 1 mA , IB=0
600 400 7
IE= 100 μA，IC=0 VCB= 600 V , IE=0 VCE= 400 V , IB=0 VEB= 7 V , VCE= 20 IC=0
V, IC= 20m A
10 5
70
VCE= 10V, IC= 0.25 mA IC= 50mA, IB= 10 m A IC= 50 mA, IB= 10m A VCE= 20 V, I C=20mA
0.5 1.2
V V
Transition frequency
f
T
8
MHz
f = 1MHz
Fall time Storage time
t
f
IC=50mA, IB1=-IB2=5mA, VCC=45V
0.3 1.5
μs μs
tS
CLASSIFICATION OF h FE(1)
Range 10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b φ
e e1
Symbol A A1 b c D D1 E e e1 L
Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.4……
