器件名称: 2SD2061
功能描述: TO-220F Plastic-Encapsulate Transistors
文件大小: 113.57KB 共2页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD2061
TRANSISTOR (NPN)
TO-220F
1. BASE
FEATURES z Low saturation voltage z Excellent DC current gain characteristice
2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC
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Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
Value 80 60 5 3 2 150 -55-150
Units V V V A W ℃ ℃
Tj
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test
otherwise
conditions
specified)
MIN 80 60 5 10 10 100 320 1 1.5 8 70 V V MHz pF TYP MAX UNIT V V V A A
IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=60V, IE=0 VEB=4V, IC=0 VCE=5V, IC=0.5A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.5A, f=5MHz VCB=10V, IE=0, f=1MHz
Typical Characteristics
2SD2061
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