器件名称: AS7C251MFT18A-75TQC
功能描述: 2.5V 1M x 18 flowthrough burst synchronous SRAM
文件大小: 511.49KB 共19页
简 介:December 2004
AS7C251MFT18A
2.5V 1M x 18 flowthrough burst synchronous SRAM Features
Organization: 1,048,576 words x18 bits Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available 100-pin TQFP package Individual byte write and global write Multiple chip enables for easy expansion 2.5V core power supply Linear or interleaved burst control Snooze mode for reduced power-standby
Logic block diagram
LBO
CLK ADV ADSC ADSP A[19:0] CLK CS CLR
Burst logic
Q
20
CS Address register CLK
D
20
18 20
1M x 18 Memory array 18 18
GWE BWb BWE BWa CE0 CE1 CE2
D DQb
Q
CLK D DQa Q
Byte Write registers
Byte Write registers
CLK D
2
OE
CE CLK D ZZ
Enable register
Q
Output buffers
Input registers
CLK
Power down
Enable delay register
Q
CLK OE
18
DQ[a,b]
Selection guide
-75 Minimum cycle time Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC) 8.5 7.5 275 90 60 -85 10 8.5 250 80 60 -10 12 10 230 80 60 Units ns ns mA mA mA
12/24/04, v. 1.2
Alliance Semiconductor
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Copyright Alliance Semiconductor. All rights reserved.
AS7C251MFT18A
16 Mb 2.5V Synchronous SRAM products list1,2
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