器件名称: 74ALVC00PW
功能描述: Quad 2-input NAND gate
文件大小: 87.75KB 共16页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74ALVC00 Quad 2-input NAND gate
Product specication Supersedes data of 2003 Feb 06 2003 May 14
Philips Semiconductors
Product specication
Quad 2-input NAND gate
FEATURES Wide supply voltage range from 1.65 to 3.6 V 3.6 V tolerant inputs/outputs CMOS low power consumption Direct interface with TTL levels (2.7 to 3.6 V) Power-down mode Latch-up performance exceeds 250 mA Complies with JEDEC standard: JESD8-7 (1.65 to 1.95 V) JESD8-5 (2.3 to 2.7 V) JESD8B/JESD36 (2.7 to 3.6 V). ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C. SYMBOL tPHL/tPLH PARAMETER propagation delay inputs nA, nB to output nY CONDITIONS VCC = 1.8 V; CL = 30 pF; RL = 1 k VCC = 2.5 V; CL = 30 pF; RL = 500 VCC = 2.7 V; CL = 50 pF; RL = 500 VCC = 3.3 V; CL = 50 pF; RL = 500 CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. input capacitance power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 DESCRIPTION
74ALVC00
The 74ALVC00 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families……