器件名称: 74AHC1G32GW
功能描述: 2-input OR gate
文件大小: 74.62KB 共16页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC1G32; 74AHCT1G32 2-input OR gate
Product specication Supersedes data of 2002 Mar 26 2002 Jun 05
Philips Semiconductors
Product specication
2-input OR gate
FEATURES Symmetrical output impedance High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Multiple very small 5-pin packages Output capability: standard Specified from 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
74AHC1G32; 74AHCT1G32
DESCRIPTION The 74AHC1G/AHCT1G32 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G32 provides the 2-input OR function.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. VI = GND to VCC. PARAMETER CONDITIONS AHC1G propagation delay A and B to Y CL = 15 pF; VCC = 5 V input capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 3.2 1.5 16 AHCT1G 3.3 1.5 17 ns pF pF UNIT
2002 Jun 05
2
Philips Semiconductors
Product specication
2-input OR gate
FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION TYPE NUMBER 74AHC1G32GW 74AHCT1G32GW 74AHC1G……
