器件名称: 74AHC1G00GV
功能描述: 2-input NAND gate
文件大小: 74.04KB 共16页
简 介:INTEGRATED CIRCUITS
DATA SHEET
74AHC1G00; 74AHCT1G00 2-input NAND gate
Product specication Supersedes data of 2002 Feb 27 2002 May 27
Philips Semiconductors
Product specication
2-input NAND gate
FEATURES Symmetrical output impedance High noise immunity ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. Low power dissipation Balanced propagation delays Very small 5-pin package Output capability: standard Specified from 40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
74AHC1G00; 74AHCT1G00
DESCRIPTION The 74AHC1G/AHCT1G00 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G00 provides the 2-input NAND function.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. PARAMETER propagation delay A and B to Y input capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 CONDITIONS AHC1G CL = 15 pF; VCC = 5 V 3.5 1.5 17 AHCT1G 3.6 1.5 18 ns pF pF UNIT
2002 May 27
2
Philips Semiconductors
Product specication
2-input NAND gate
FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION B L H L H
74AHC1G00; 74AHCT1G……
