EEPW首页 | 器件索引 | 厂商列表 | IC替换 | 微缩略语 | 电路图查询
器件查询:
400万器件资料库等您来搜!
   首页 > UTC > 6N60L-BTA3-T

6N60L-BTA3-T

器件名称: 6N60L-BTA3-T
功能描述: 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET
文件大小: 141.59KB    共7页
生产厂商: UTC
下  载:    在线浏览   点击下载
简  介:UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION Power MOSFET The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES *Pb-free plating product number: 6N60L * RDS(ON) = 1.5 @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 6N60-x-TA3-T 6N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube www.unisonic.com.tw Copyright 2007 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-117.A 6N60 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) 6N60-A 6N60-B SYMBOL VDSS VGSS IAR Power MOSFET RATINGS 600 650 ±30 UNIT V V V A A A A mJ mJ W 6.2 TC = 25°C 6.2 Continuous Drain Current ID TC = 100°C 3.9 Pulsed Drain Current (Note 1) IDM 24.8 Single Pulsed (Note 2) EAS 440 Avalanche Energy Repetitive (Note 1) EAR 13 Power Dissipation PD 62.5 Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage ……
相关电子器件
器件名 功能描述 生产厂商
6N60L-BTA3-T 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET UTC
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2