器件名称: 6N60-ATA3-R
功能描述: 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET
文件大小: 141.59KB 共7页
简 介:UNISONIC TECHNOLOGIES CO., LTD 6N60
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
Power MOSFET
The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
*Pb-free plating product number: 6N60L
* RDS(ON) = 1.5 @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Normal Lead Free Plating 6N60-x-TA3-T 6N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube
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QW-R502-117.A
6N60
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Avalanche Current (Note 1) 6N60-A 6N60-B SYMBOL VDSS VGSS IAR
Power MOSFET
RATINGS 600 650 ±30
UNIT V V V A A A A mJ mJ W
6.2 TC = 25°C 6.2 Continuous Drain Current ID TC = 100°C 3.9 Pulsed Drain Current (Note 1) IDM 24.8 Single Pulsed (Note 2) EAS 440 Avalanche Energy Repetitive (Note 1) EAR 13 Power Dissipation PD 62.5 Junction Temperature TJ +150 Operating Temperature TOPR -55 ~ +150 Storage ……
