器件名称: 2T1
功能描述: SOT-23 Plastic-Encapsulate Transistors
文件大小: 42.63KB 共1页
简 介:SOT-23 Plastic-Encapsulate Transistors
SOT-23
AV9012LT1
FEATURES Power dissipation PCM:
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
0.3
W (Tamb=25℃)
0. 95
1. 0
2. 4 1. 3
0. 95
Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=-1V, IC=-500mA IC=-500 mA, IB= -50mA IC=-500 mA, IB= -50mA VCE=-6V, IC= -20mA
2. 9
1. 9
Unit: mm
unless otherwise specified)
Test conditions MIN -40 -25 -5 -0.1 -0.1 -0.1 120 40 -0.6 -1.2 150 V V MHz 400 TYP MAX UNIT V V V
Ic= -100A, IE=0 Ic= -1mA, IB=0 IE=-100A, IC=0 VCB=-40 V, IE=0 VCE=-20V, IB=0 VEB= -5V, IC=0 VCE=-1V, IC= -50mA
0. 4
A A A
fT
f=30MHz H 200-350
CLASSIFICATION OF hFE(1) Rank Range
L 120-200
J 300-400
DEVICE MARKING
S9012LT1=2T1
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