器件名称: 2STW4466_08
功能描述: High power NPN epitaxial planar bipolar transistor
文件大小: 164.62KB 共9页
简 介:2STW4466
High power NPN epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = 80 V Complementary to 2STW1693 Typical ft = 20 MHz Fully characterized at 125 oC
Applications
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3 2 1
Audio power amplifier TO-247
Description
The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STW4466 Package TO-247 Packaging Tube
Order code
2STW4466
September 2008
Rev 2
1/9
www.st.com 9
Electrical ratings
2STW4466
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 100 80 6 6 12 60 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ____max Value 2.08 Unit °C/W
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2STW4466
Electrical characteristics
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Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO V(BR)EBO V(BR)CBO V(BR)CEO VCE(sat) (1) VBE (1) hFE fT CCBO
Electrical characteristics
Parameter Colle……
