器件名称: 2STN2540-A
功能描述: Low voltage fast-switching PNP power bipolar transistor
文件大小: 203.95KB 共9页
简 介:2STN2540-A
Low voltage fast-switching PNP power bipolar transistor
Features
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The device is qualified for automotive application Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in medium power SOT-223 package
4
1
SOT-223
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3
Applications
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Emergency lighting LED CCFL drivers (back lighting) Voltage regulation Relay driver Figure 1. Internal schematic diagram
Description
The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Table 1.
Device summary
Marking N2540 Package SOT-223 Packaging Tape & reel
Order code 2STN2540-A
January 2008
Rev 2
1/9
www.st.com 9
Electrical ratings
2STN2540-A
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base peak current (tP < 5ms) Total dissipation at Tamb = 25°C Storage temperature Max. operating junction temperature Value -40 -40 -6 -5 -10 -2 1.6 -65 to 150 150 Unit V V V A A A W °C °C
Table 3.
Symbol
Thermal data
Parameter __max Value 78 Unit °C/W
Rthj-amb(1) Thermal resistance junction-amb
1. Device mounted on PCB area of 1cm2
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2STN2540-A
Electrical char……
