器件名称: 2STC5949
功能描述: High power NPN epitaxial planar bipolar transistor
文件大小: 144.39KB 共8页
简 介:2STC5949
High power NPN epitaxial planar bipolar transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
■
Audio power amplifier
TO-264
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STC5949 Package TO-264 Packaging Tube
Order code 2STC5949
July 2008
Rev 3
1/8
www.st.com 8
Absolute maximum ratings
2STC5949
1
Absolute maximum ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 250 250 6 17 34 220 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case _____ __max Value 0.568 Unit °C/W
2/8
2STC5949
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 250 V VEB = 6 V 250 250 6 IB = 800 mA V ……
