器件名称: 2STC4468
功能描述: High power NPN epitaxial planar bipolar transistor
文件大小: 213.97KB 共9页
简 介:2STC4468
High power NPN epitaxial planar bipolar transistor
General features
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Preliminary data
High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC
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Applications
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Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube
Electrical ratings
June 2007
Rev 1
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
2STC4468
Table 1.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 200 140 6 10 20 100 -65 to 150 150 Unit V V V A A W °C °C
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______________ __max Value 1.25 Unit °C/W
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2STC4468
Electrical characteristics
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Electrical characteristics
(TCASE = 25°C; unless otherwise s……