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2STC4467

器件名称: 2STC4467
功能描述: High power NPN epitaxial planar bipolar transistor
文件大小: 96.11KB    共7页
生产厂商: STMICROELECTRONICS
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简  介:2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 120 V Complementary to 2STA1694 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STC4467 Package TO-3P Packaging Tube Order code 2STC4467 April 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 2STC4467 1 Table 2. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Electrical ratings Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value 120 120 6 8 16 80 -65 to 150 150 Unit V V V A A W °C °C Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 1.563 Unit °C/W 2/7 2STC4467 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Symbol ICBO IEBO Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 120 V VEB = 6 V IC = 50 mA IC = 100 A ……
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2STC4467 High power NPN epitaxial planar bipolar transistor STMICROELECTRONICS
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