器件名称: 2STC2510
功能描述: High power NPN epitaxial planar bipolar transistor
文件大小: 95.67KB 共7页
简 介:2STC2510
High power NPN epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier
TO-3P
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STC2510 Package TO-3P Packaging Tube
Order code 2STC2510
May 2008
Rev 2
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www.st.com 7
Electrical ratings
2STC2510
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 100 100 6 25 50 125 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case _______ __max Value 1 Unit °C/W
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2STC2510
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 100 V VEB = 6 V 100 100 6 IB = 1.2 A IB = 12 A VCE ……
