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2STA2510

器件名称: 2STA2510
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 95.76KB    共7页
生产厂商: STMICROELECTRONICS
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简  介:2STA2510 High power PNP epitaxial planar bipolar transistor Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Fast-switching speed Typical ft = 20 MHz Fully characterized at 125 oC 3 2 1 Applications ■ Audio power amplifier TO-3P Description The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STA2510 Package TO-3P Packaging Tube Order code 2STA2510 May 2008 . Rev 2 1/7 www.st.com A7 Electrical ratings 2STA2510 1 Table 2. Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ Electrical ratings Absolute maximum rating Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -100 -100 -6 -25 -50 125 -65 to 150 150 Unit V V V A A W °C °C Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case ______________ __max Value 1 Unit °C/W 2/7 2STA2510 Electrical characteristics 2 Electrical characteristics (Tcase = 25°C; unless otherwise specified) Table 4. Symbol ICBO IEBO Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = -100 V VEB = -6 V -100 -100 -6 IB = ……
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2STA2510 High power PNP epitaxial planar bipolar transistor STMICROELECTRONICS
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