器件名称: 2STA2120
功能描述: High power PNP epitaxial planar bipolar transistorl
文件大小: 161.33KB 共8页
简 介:2STA2120
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
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High breakdown voltage VCEO = 250 V Complementary to 2STC5948 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier
TO-3P
Description
Figure 1. The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Internal schematic diagram
Table 1.
Device summary
Marking 2STA2120 Package TO-3P Packaging Tube
Order code 2STA2120
May 2008
Rev 2
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This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Electrical ratings
2STA2120
1
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Electrical ratings
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -250 -250 -6 -17 -34 200 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______________ __max Value 0.625 Unit °C/W
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2STA2120
Electrical characteristics
2
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO
Ele……
