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2STA1962

器件名称: 2STA1962
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 180.3KB    共9页
生产厂商: STMICROELECTRONICS
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简  介:2STA1962 High power PNP epitaxial planar bipolar transistor Features ■ ■ ■ ■ High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz 3 2 1 Application ■ Audio power amplifier TO-3P Description This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STA1962 1 Electrical ratings Table 2. Symbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ Absolute maximum ratings Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at TC = 25 °C Storage temperature Operating junction temperature Value -230 -230 -5 -15 -30 150 -55 to 150 150 Unit V V V A A W °C °C Table 3. Symbol RthJ-case Thermal data Parameter Thermal resistance junction-case Max Value 0.83 Unit °C/W 2/9 2STA1962 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol ICBO IEBO Electrical characteristics Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = -230 V VEB = -5 V -230 -230 -5 IB = -800 mA VCE = -5 V VCE = -5 V VCE = -5 V 80 35 -3 -1.5 160 Min……
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2STA1962 High power PNP epitaxial planar bipolar transistor STMICROELECTRONICS
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