器件名称: 2STA1962
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 180.3KB 共9页
简 介:2STA1962
High power PNP epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = -230 V Complementary to 2STC5242 Fast-switching speed Typical fT = 30 MHz
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Application
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Audio power amplifier
TO-3P
Description
This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code 2STA1962 Marking 2STA1962 Package TO-3P Packaging Tube
July 2008
Rev 3
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www.st.com 9
Electrical ratings
2STA1962
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Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at TC = 25 °C Storage temperature Operating junction temperature Value -230 -230 -5 -15 -30 150 -55 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol RthJ-case
Thermal data
Parameter Thermal resistance junction-case Max Value 0.83 Unit °C/W
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2STA1962
Electrical characteristics
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Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = -230 V VEB = -5 V -230 -230 -5 IB = -800 mA VCE = -5 V VCE = -5 V VCE = -5 V 80 35 -3 -1.5 160 Min……
