器件名称: 2ST5949
功能描述: High power NPN epitaxial planar bipolar transistor
文件大小: 144.79KB 共8页
简 介:2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2ST2121 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
■
1 2
TO-3
Audio power amplifier
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2ST5949 Package TO-3 Packaging tray
Order code 2ST5949
May 2008
Rev 2
1/8
www.st.com 8
Electrical ratings
2ST5949
1
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Electrical ratings
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 250 250 6 17 34 250 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______________ __max Value 0.5 Unit °C/W
2/8
2ST5949
Electrical characteristics
2
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Test conditions VCB = 250 V VEB = 6 V IC = 50 mA IC = 100 A 250 250 6 IB = ……
