器件名称: 2ST2121
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 144.94KB 共8页
简 介:2ST2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
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High breakdown voltage VCEO = 250 V Complementary to 2ST5949 Fast switching speed Typical ft = 25 MHz Fully characterized at 125 oC
Applications
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1 2
TO-3
Audio power amplifier
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2ST2121 Package TO-3 Packaging tray
Order code 2ST2121
July 2008
Rev 4
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www.st.com 8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Absolute maximun rating
2ST2121
1
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximun rating
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -250 -250 -6 -17 -34 250 -65 to 200 200 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______________ __max Value 0.7 Unit °C/W
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2ST2121
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO
Ele……