器件名称: 2N4923
功能描述: NPN SILICON EPITAXIAL TRANSISTOR
文件大小: 42.67KB 共2页
简 介:Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100
NPN SILICON EPITAXIAL TRANSISTOR
2N4923 TO-126
General Purpose Power Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current Continuous IB Base Current PD Power Dissipation @ Tc=25 deg C Derate Above 25 deg C Tj, Tstg Operating And Storage Junction Temperature Range Lead Temperature for Soldering 1/16" TL from Body for 10 Seconds. Thermal Resistance Rth (j-c) Junction to Case VALUE 80 80 5.0 3.0 1.0 30 0.24 -65 to +150 260 UNIT V V V A A W W/deg C deg C deg C
4.16
deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus) IC=100mA, IB=0 Collector -Emitter Sustaining Voltage ICEO VCE=40V, IB=0 Collector Cut off Current ICBO VCB=80V, IE=0 ICEX VCB=80V,VEB(0ff)=1.5V Tc=125 deg C VCB=80V,VEB(0ff)=1.5V IEBO VEB=5V, IC=0 Emitter Cut off Current hFE * IC=50mA,VCE=1V DC Current Gain IC=500mA,VCE=1V IC=1A,VCE=1V VCE(sat)* IC=1A, IB=0.1A Collector Emitter Saturation Voltage VBE(sat)* IC=1A, IB=0.1A Base Emitter Saturation Voltage VBE(on) * IC=1A,VCE=1V Base Emitter on Voltage DYNAMIC CHARACTERISTICS ft IC=250mA,VCE=10V,f=1MHz Transistors frequency Cob VCB=10V, IE=0, f=100kHz Output Capacitance hfe IC=250mA,VCE=10V,f=1kHz Small Signal Current Gain *Pulse Test P……
