器件名称: 2N4899X
功能描述: PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
文件大小: 14.77KB 共2页
简 介:2N4898X 2N4899X 2N4900X
MECHANICAL DATA Dimensions in mm (inches)
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 3.86 (0.145) rad.
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
APPLICATIONS
24.33 (0.958) 24.43 (0.962)
0.71 (0.028) 0.86 (0.034)
14.48 (0.570) 14.99 (0.590)
4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
1.27 (0.050) 1.91 (0.750)
TO–66 Metal Package.
ABSOLUTE MAXIMUM RATINGS
V(BR)CBO V(BR)CEO V(BR)EBO IC IB PD TC Tstg RθJC Semelab plc. (Tcase = 25°C unless otherwise stated) 2N4898X 2N4899X 2N4900X Collector – Base Breakdown Voltage –40V –60V –80V Collector – Emitter Breakdown Voltage –40V –60V –80V Emitter – Base Breakdown Voltage –5V Continuous Collector Current –4A Base Current –1A Total Power Dissipation 25W Operating Case Temperature Range –65 to +200°C Storage Temperature Range –65 to +200°C Thermal Resistance , Junction To Case 7.0°C/W
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/96
11.94 (0.470) 12.70 (0.500)
Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package.
2N4898X 2N4899X 2N4900X
Electrical Characteristics (TC = 25°C unless otherwise stated.)
Parameter
ICEO ICEX ICBO ICES VCE(sat)* VBE(sat)* VBE* hFE* Collector – Emitter Cut-off Current Collector – Emitter Cut-off Current Collector – Base Cut-off Current Collector – Emitter Leakage Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Volt……
