器件名称: W53SF4BT
功能描述: T-1 3/4(5mm)INFRA-RED EMITTING DIODE
文件大小: 83.82KB 共3页
简 介:T-1 3/4 (5mm) INFRA-RED EMITTING DIODE
W53SF4BT
Features
!MECHANICALLY AND SPECTRALLY MATCHED
Description
SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes.
TO THE W51P3C PHOTOTRANSISTOR.
!BOTH WATER CLEAR LENS AND BLUE TRANSPARENT
LENS AVAILABLE
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
SPEC NO: DSAD2234 APPROVED: J. Lu
REV NO: V.2 CHECKED: Allen Liu
DATE: APR/29/2003 DRAWN: K.ZHANG
PAGE: 1 OF 3
Selection Guide
Par t No . Di c e L en s Ty p e Po (mW/s r ) @ 20 mA *50mA Min . W53SF4BT GaAlAs BLUE TRANSPARENT 4 *7 Ty p . 20 *30 View in g An g l e 2θ1/2 20° 20°
Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA.
Electrical / Optical Characteristics at T)=25°C
Par ameter Forward Voltage Reverse Current Capacitance Wavelength at peak emission Spectral line half-width P/N S F4 S F4 S F4 S F4 S F4 Sy m b o l VF IR C λP λ 1/2 Ty p . 1.3 90 880 50 Max . 1.6 10 Un i t V uA pF nm nm Co n d i t i o n IF= 2 0 m A V R= 5 V V F= 0 V ; f = 1 M H z IF= 2 0 m A IF= 2 0 m A
Absolute Maximum Ratings at T)=25°C
Item Power Dissipation Forward Current Peak Forward Current[1] Reverse Voltage Operating Temperature Storage Temperature Lead Solder Tempe……
