器件名称: 28C256TRT4FI-12
功能描述: 256K EEPROM (32K x 8-Bit) EEPROM
文件大小: 283.56KB 共14页
简 介:28C256T
256K EEPROM (32K x 8-Bit) EEPROM
VCC GND DATA INPUTS/OUTPUTS I/O0 - I/O7
OE WE CE OE, CE, and WE LOGIC
DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX
Y DECODER ADDRESS INPUTS X DECODER
IDENTIFICATION
Logic Diagram
Memory
FEATURES:
RAD-PAK radiation-hardened against natural space radiation Total dose hardness: - > 100 Krad (Si), dependent upon space mission Excellent Single Event Effects: - SELTH LET: > 120 MeV/mg/cm2 - SEUTH LET (read mode): > 90 MeV/mg/cm2 - SEUTH LET (write mode): > 18 MeV/mg/cm2 Package: - 28 pin RAD-PAK flat pack - 28 pin RAD-PAK DIP - JEDEC approved byte wide pinout High Speed: - 120, 150 ns maximum access times available High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention Page Write Mode: - 1 to 64 bytes Low power dissipation: - 15 mA active current (cycle = 1 s) - 20 A standby current (CE = VCC)
DESCRIPTION:
Maxwell Technologies’ 28C256T high density 256k-bit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C256T is capable of in-system electrical byte and page programmability. It has a 64-Byte page programming function to make its erase and write operations faster. It also features data polling to indicate the completion of erase and programming operations. Maxwell Technologies' patented RAD-PAK packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providi……
