器件名称: 2SC3494
功能描述: Silicon NPN Epitaxial Planar
文件大小: 24.33KB 共5页
简 介:2SC3494
Silicon NPN Epitaxial Planar
Application
FM RF/IF amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2SC3494
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Collector output capacitance Noise figure Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) Cob NF PG
1
Min 30 30 5 — — 60 — — — — 26 13
Typ — — — — — — 0.63 0.6 1.8 5.0 29 17
Max — — — 0.5 0.5 200 0.75 1.1 3.5 — — —
Unit V V V A A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA
V V pF dB dB
VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IE = –1 mA, f = 1 MHz, Rg = 500 VCE = 6 V, IE = –1 mA, f = 10.7 MHz VCE = 6 V, IE = –1 mA, f = 100 MHz
Note: B
1. The 2SC3494 is grouped by h FE as follows. C 100 to 200
60 to 120
See characteristic curves of 2SC460.
2
2SC3494
Maximum Collector Dissipation Curve C……
