器件名称: 2SC3470
功能描述: Silicon NPN Epitaxial
文件大小: 24.13KB 共5页
简 介:2SC3470
Silicon NPN Epitaxial
Application
Low frequency amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2SC3470
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: D 250 to 500 E 400 to 800 F 600 to 1200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob
1
Min 55 50 5 — — 250 — — — —
Typ — — — — — — — — 230 1.8
Max — — — 0.5 0.5 1200 0.75 0.2 — 3.5
Unit V V V A A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA
V V MHz pF
VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz
1. The 2SC3470 is grouped by h FE as follows.
See characteristic curves of 2SC1345.
2
2SC3470
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300
200
100
0
50 100 Ambient Temperature Ta (°C)
150
3
4.2 Max ……
