器件名称: 2SC3413
功能描述: Silicon NPN Epitaxial
文件大小: 24.37KB 共5页
简 介:2SC3413
Silicon NPN Epitaxial
Application
Low frequency low noise amplifier HF amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2SC3413
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 40 30 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF
1
Min 40 30 5 — — 100 — — — — —
Typ — — — — — — — — 200 — 1.0
Max — — — 0.5 0.5 500 0.75 0.2 — 3.5 5.0
Unit V V V A A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA
V V MHz pF dB
VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, Rg = 1 k, f = 1 kHz
1. The 2SC3413 is grouped by h FE as follows. C 160 to 320 D 250 to 500
See characteristic curves of 2SC458(LG).
2
2SC3413
Maximum Collector Dissipation Curve Collector ……
