器件名称: 2SC3391
功能描述: Silicon NPN Epitaxial Planar
文件大小: 24.28KB 共5页
简 介:2SC3391
Silicon NPN Epitaxial Planar
Application
VHF amplifier, Mixer, Local oscillator
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2SC3391
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 200 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Note: B 60 to 120 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* VBE VCE(sat) fT Cob PG NF
1
Min 30 20 4 — 60 — — 450 — 17 —
Typ — — — — — 0.72 0.17 940 0.9 20 3.5
Max — — — 0.5 200 — — — 1.2 — 5.5
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 mA
V V MHz pF dB dB
VCE = 6 V, IC = 1 mA I C = 20 mA, IB = 4 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 mA, f = 100 MHz VCE = 6 V, IC = 1 mA, Rg = 50 , f = 100 MHz
1. The 2SC3391 is grouped by h FE as follows. C 100 to 200
See characteristic curves of 2SC535.
2
2SC3391
Maximum Collector Dissipation Curve Collector Power Dissipation P……
