器件名称: 2SC3338
功能描述: Silicon NPN Epitaxial
文件大小: 24.33KB 共5页
简 介:2SC3338
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SC3338
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 400 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “AR”. Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 1.0 4.5 8.2 2.0 Max — — 10 0.5 200 1.5 — — — pF GHz dB dB Unit V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 15 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
See characteristic curves of 2SC3127.
2
2SC3338
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600
400
200
0
50 100 Ambient Temperature Ta (°C)
150
3
Unit: mm
4.5 ± 0.1
0.4
1.8 Max φ1
1.5 ± 0.1 0.44 Max (2.5)
(1.5)
1.5 1.5 3.0
0.8 Min
0.44 Max
Hitachi Code JEDEC EIAJ Weight (reference value)
……
