器件名称: 2SC3127ID-TL-E
功能描述: Silicon NPN Epitaxial
文件大小: 177.6KB 共8页
简 介:2SC3127
Silicon NPN Epitaxial
REJ03G0711-0300 (Previous ADE-208-1080A) Rev.3.00 Aug.10.2005
Application
UHF/VHF wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking for 2SC3127 is “ID–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C
Rev.3.00 Aug 10, 2005 page 1 of 7
2SC3127
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO IEBO ICBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 0.9 4.5 10.5 2.2 Max — — 10 0.5 200 1.5 — — — Unit V V A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz
Rev.3.00 Aug 10, 2005 page 2 of 7
2SC3127
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation Pc (mW)
300
DC Current Transfer Ratio vs. Collector Current
200
VCE = 5 V
……