器件名称: CY14B116L、CY14B116N、CY14B116S、CY14E116L、CY14E116N、CY14E116S
功能描述: 16 Mb nvSRAM是市场上最快的高容量异步非易失性RAM，存取时间可低至25 ns。赛普拉斯的新器件可选择集成实时时钟（RTC），以便在重要数据日志中标记时间。赛普拉斯的nvSRAM具有无限次读、写和恢复的特点，在85˚C的温度下数据可保存20年，65˚C下则可以保存150年。
文件大小: 818.89KB 共38页
简 介:PRELIMINARY
CY14B116L/CY14B116N/CY14B116S CY14E116L/CY14E116N/CY14E116S
16-Mbit (2048 K × 8/1024 K × 16/512 K × 32) nvSRAM
Features
16-Mbit nonvolatile static random access memory (nvSRAM) 25-ns, 30-ns and 45-ns access times Internally organized as 2048 K × 8 (CY14X116L), 1024 K × 16 (CY14X116N), 512 K × 32 (CY14X116S) Hands-off automatic STORE on power-down with only a small capacitor STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power-down RECALL to SRAM initiated by software or power-up ■ High reliability Infinite read, write, and RECALL cycles 1 million STORE cycles to QuantumTrap Data retention: 20 years ■ Sleep mode operation ■ Low power consumption Active current of 75 mA at 45 ns Standby mode current of 650 A Sleep mode current of 10 A
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Offered speeds 44-pin TSOP II: 25 ns and 45 ns 48-pin TSOP I: 30 ns and 45 ns 54-pin TSOP II: 25 ns and 45 ns 165-ball FBGA: 25 ns and 45 ns
Functional Description
The Cypress CY14X116L/CY14X116N/CY14X116S is a fast SRAM, with a nonvolatile element in each memory cell. The memory is organized as 2048 K bytes of 8 bits each or 1024 K words of 16 bits each or 512 K words of 32 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written t……
