器件名称: SiSS23DN
功能描述: P-Channel 20 V (D-S) MOSFET
文件大小: 237.99KB 共8页
简 介:SiSS23DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () Max. 0.0045 at VGS = - 4.5 V - 20 0.0063 at VGS = - 2.5 V 0.0115 at VGS = - 1.8 V ID (A) - 50e - 50e - 50e 93 nC Qg (Typ.)
TrenchFET Power MOSFET Low Thermal Resistance PowerPAK Package with Small Size and Low 0.75 mm Profile 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PowerPAK 1212-8S
APPLICATIONS
3.3 mm
S
0.75 mm
3.3 mm
1
S
2
S
3
G
4
Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch - Power Management - Battery Management
S
G
D
8
D
7
D
6
D
5
Bottom View
D
Ordering Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 s) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
c, d
Symbol VDS VGS
Limit - 20 ±8 - 50e - 50e - 27a, b - 21a, b - 200 - 47.5 - 4a, b - 23 26 57 36 4.8a, b 3a, b - 50 to 150 260
Unit V
ID
IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS IAS EAS
A
mJ
PD
W
TJ, Tstg
°C
Notes: a. Surface mount……
