器件名称: Si5415AEDU
功能描述: P-Channel 20 V (D-S) MOSFET
文件大小: 166.6KB 共9页
简 介:Si5415AEDU
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () (Max.) 0.0096 at VGS = - 4.5 V 0.0132 at VGS = - 2.5 V 0.0220 at VGS = - 1.8 V
PowerPAK ChipFET Single
1 2
D D D D D D G S S
FEATURES
ID (A)a - 25 - 25 -7 43 nC Qg (Typ.)
TrenchFET Power MOSFET Thermally Enhanced PowerPAK ChipFET Package - Small Footprint Area - Low On-Resistance 100 % Rg and UIS Tested Typical ESD Protection: 5500 V (HBM) Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
3 4
S
8 7
6 5
1.9
mm
Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Battery Switch - Load Switch - Power Management
Marking Code
G
Bottom View
LC
XXX
Ordering Information: Si5415AEDU-T1-GE3 (Lead (Pb)-free and Halogen-free)
Lot Traceability and Date Code
D
P-Channel MOSFET
Part # Code
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Avalanche Current Single Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit - 20 ±8 - 25a - 25a - 15b, c - 12b, ……
