器件名称: V15PN50
功能描述: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
文件大小: 85.85KB 共5页
简 介:V15PN50
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.26 V at IF = 5 A
FEATURES
TMBS
K
eSMP Series
Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
1 2
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max. 15 A 50 V 200 A 0.41 V 150 °C
MECHANICAL DATA
Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Maximum DC reverse voltage Peak forward surge current 10 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Notes (1) Mounted on 30 mm x 30 mm 2 oz. pad PCB (2) Free air, mounted on recommended copper……
