器件名称: CS201 Series
功能描述: The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power
consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor
industry, and are able to implement a m
文件大小: 128.52KB 共8页
简 介:FUJITSU MICROELECTRONICS DATA SHEET
DS06-20211-2E
Semicustom
CMOS
Standard Cell
CS201 Series
■ DESCRIPTION
The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor industry, and are able to implement a mixture of core transistors with three different threshold voltages, as appropriate for the applications ranging from handheld terminals to digital audiovisual equipment. The integration level in this series is twice the previous series with lower power consumption.
■ FEATURES
Technology : 65 nm Si gate CMOS 6 to 12 layers of metal wiring. Ultra Low-K (low permittivity) material is used for dielectric inter-layers. Three different types of core transistors (low leak, standard and high speed) can be used on the same chip. Power supply voltage : Supports a wide range from + 0.9 V to + 1.3 V Operation junction temperature : 40 °C to + 125 °C (standard) Gate delay time : 11 ps (1.2 V, Inverter, F/O = 1) Gate power consumption : 1.77 nW/gate (operating condition: 1.2 V, operating rate 0.5, 1 MHz) Reduced chip size achieved by creating the wire bonding pads within the I/O macro regions. Support various cell sets (from low power versions to high speed versions) Compiled cell (RAM, ROM, others) Support large capacity memory “1T-SRAM-Q ”*1 “1T-SRAM-Q ” is the embedded memory which enable maximum 128Mbit. Support low-consumpti……
