器件名称: ZXMN3G32DN8TA
功能描述: 30V SO8 dual N-channel enhancement mode MOSFET
文件大小: 450.45KB 共8页
简 介:ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 30 RDS(on) () 0.028 @ VGS= 10V 0.045 @ VGS= 4.5V ID (A) 7.1 5.6
Description
This new generation Trench MOSFET from Zetex features low onresistance and fast switching speed.
Features
Low on-resistance 4.5V gate drive capability Fast switching bullet
D1
D2
G1 S1
G2 S2
Applications
DC-DC Converters Power management functions Motor Control Backlighting
S1 G1 S2
Tape width (mm) 12 Quantity per reel 500
D1 D1 D2 D2
Ordering information
DEVICE ZXMN3G32DN8TA Reel size (inches) 7
G2
Device marking
ZXMN 3G32D
Issue 1 - January 2008
Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3G32DN8
Absolute maximum ratings
Parameter Drain source voltage Gate source voltage Continous Drain Current @ VGS=10; TA=25°C(b) @ VGS=10; TA=70°C(b) @ VGS=10; TA=25°C(a) Pulsed drain current(c) Continuous source current (body diode)(b) Pulsed source current (body diode)(c) Power dissipation at TA =25°C(a)(d) Linear derating factor Power dissipation at TA =25°C(a)(e) Linear derating factor Power dissipation at TA =25°C(b)(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD Symbol VDSS VGS ID Limit 30 ±20 7.1 5.7 5.5 33.6 3.1 33.6 1.25 10 1.8 14 2.1 17 -55 to 150 Unit V V A A A A A A W mW/°C W mW/°C W mW/°C °C
IDM IS ISM PD
Thermal resistance
Parameter Junction to Junction to ambient(a)(d) ambient(a)(e) Symbol RJA RJA RJA RJL Limit 100 70 60 51 Unit °C/W °C/W °C/W °C/W
Junction t……
