器件名称: FZT851
功能描述: SOT223 NPN SILICON PLANAR HIGH CURRENT
文件大小: 64.91KB 共3页
简 介:SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - OCTOBER 1995 FEATURES * * * * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps
FZT851 FZT853
C
E C B
PARTMARKING DETAILS COMPLEMENTARY TYPES -
DEVICE TYPE IN FULL FZT851 FZT951 FZT853 FZT953
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg FZT851 150 60 6 20 6 3 -55 to +150 FZT853 200 100 6 10 UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
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FZT851
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CER V (BR)CEO V (BR)EBO I CBO MIN. 150 150 60 6 TYP. 220 220 85 8 50 1 50 1 10 50 100 170 375 1200 1150 100 100 75 25 200 200 120 50 130 45 45 1100 MAX. UNIT V V V V nA A nA A nA mV mV mV mV mV mV CONDITIONS. I C=100 A I C =1 A, RB ≤ 1k I C=10mA* I E=100 A V CB=120V V CB=120V, T amb=100°C V CB=120V……
